Professor Choi Chang-hwan's Team Develops a New Material for Steel-genetics that Is Diversifiable into 3D Flash Memory Devices
Introduction on the symposium by the Institute of Electrical and Electronics Engineers on very-large-scale integration
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Professor Choi Chang-hwan, Division of Materials Science & Engineering, and Dr. Koo Bon-cheol, a research team student, have developed a new material that can solve the high-density and low-power problems of 3D flash memory devices. This research has been highly praised for opening up the possibility of reducing flash device thickness, which is a task that must be overcome in order to continuously upgrade current 3D flash memory devices.
Current 3D flash memory devices use thin-film materials consisting of oxide, nitride, and oxide (ONO) to store memory. This film has a thickness of 20 nm. 3D flash memory devices need continuous enhancement to improve their performance. However, it is difficult to reduce the thickness of existing ONO thin-film, and it is not easy to improve the speed and power of the flash element. In addition, alternative thin-film materials need to be developed due to difficulties in multi-level cells (MLCs) that can store various information in one cell.
Professor Choi's team cooled an aluminum-coated substance in Hafnium oxide (HfO2), forming a new thin-film with residual polarization and an avionics field, maximizing the properties of the steel electrode. Flash memory devices with this feature are highly desirable as they can easily be repaired using improved polarizing properties. Moreover, the thin-film thickness can be implemented even if it is under 10 nm. Also, the properties of the steel-genetic have been improved as they induce a stable orthorhombic phase through high-stress deformation.
Not only that, but Hafnium oxide is also a material that has been proven to be reliable in the field of logic semiconductors. Manufacturers being able to manufacture new Nand flash memory using this material without further investment is a significant benefit.
This study was conducted by a team led by Professor Song Yun-heup, Department of Electronic Engineering, with the support of Samsung Electronics' Future Technology Development Center. It was introduced at a symposium on very-large-scale integration (VLSI) by the Institute of Electrical and Electronics Engineers (IEEE), a world-renowned association on semiconductors, which ran for six days starting on the 14th. In particular, this study was chosen as one of the "highlighted" theses by the technical committee and was introduced to the media, allowing it to gain the spotlight.
The Symposia on VLSI Technology and Circuits, which celebrated its 40th anniversary this year, is the most prestigious conference in the field of semiconductors, along with the International Electron Device Meeting (IEDM). Annually, the conference presents the latest research on semiconductors and selects the papers that have contributed the most to semiconductor companies and academia. This year's conference was carried out online due to COVID-19 and received the most theses in 10 years. Out of the 248 papers that were received, 86 papers were selected as the most influential thesis of which only 29 papers were sponsored by universities"?).
Professor Choi said, "Technology to implement strong-genetics is emerging as a trend in academia," and he added "this is the first good example that has raised the generation of Hafnium oxide material, which will be used for NAND-flash high-density integration, to nearly universal level." In addition, he mentioned that "Out of the 8 ferrogenic thin-film thesis papers that were chosen, 5 were from companies and 3 were from universities". He said, "The research team from Hanyang University was the only Korean university to have a thesis selected," and added "it is rare to present a research conducted by university without any cooperation or sponsor of enterprises. This study is expected to contribute to the development of the thin-film that can be implemented in 3D flash memory devices."
AlHfO2 showing the properties of ferroelectric by quick cooling, completed by Professor Choi Chang-hwan's research team.
<Origin: Hanyang University>
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Global News Team
Translation by: Lee Hee-jin
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